Hyojung Kim, Ph.D. is an Assistant Professor in the Department of Semiconductor Systems Engineering at Sejong University, South Korea. He earned his Ph.D. in Materials Science and Engineering from Seoul National University in February 2021, focusing on resistive switching memory devices utilizing 2D and quasi-2D halide perovskites. With a solid foundation in chemical engineering from Sungkyunkwan University, Dr. Kim has made significant contributions to the field, evidenced by numerous publications in high-impact journals and multiple patents related to resistive switching memory technologies. His research interests include the development of flexible memory devices and FET transistors based on halide perovskites. Dr. Kim has received several accolades, including the YANGSONG Researcher Award and recognition for his top-downloaded article in Physica Status Solidi. He has also presented his findings at various international conferences, showcasing his expertise in advanced memory devices.
Professional Profile:
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Summary of Suitability for Outstanding Scientist Award: Dr. Hyojung Kim
Overview
Dr. Hyojung Kim is an exemplary candidate for the Outstanding Scientist Award due to his remarkable contributions to the field of semiconductor systems engineering, particularly in the development of advanced memory devices utilizing 2D and quasi-2D halide perovskites. As an Assistant Professor at Sejong University, South Korea, he has demonstrated a commitment to innovation and excellence in research, establishing himself as a leader in his field.
šEducation:
Hyojung Kim, Ph.D., obtained his Ph.D. in Materials Science and Engineering from Seoul National University, Seoul, South Korea, in February 2021. His doctoral thesis focused on “Resistive Switching Memory Devices based on 2D and Quasi-2D Halide Perovskites,” under the supervision of Ho Won Jang. Prior to this, he completed his Master’s in Chemical Engineering at Sungkyunkwan University, Suwon, South Korea, in February 2013, with a thesis titled “The Study of Pt-free Counter Electrode for Dye-Sensitized Solar Cell,” supervised by Jong Hyeok Park. Dr. Kim also holds a Bachelor’s degree in Chemical Engineering from Sungkyunkwan University, which he received in August 2008.
š¢Work Experience:
Hyojung Kim, Ph.D., served as a Postdoctoral Research Associate at the Davidson School of Chemical Engineering at Purdue University from 2022 to 2023. Prior to this role, he held another postdoctoral position in the Department of Materials Science and Engineering at Seoul National University from 2021 to 2022. Additionally, Dr. Kim gained valuable research experience as an Intern Researcher at the Korea Institute of Science and Technology from 2016 to 2017.
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Awards and Recognitions:
Dr. Hyojung Kim has received several prestigious awards, including the YANGSONG Researcher Award from the Korean Ceramic Society in 2021 and the Minister of Trade, Industry and Energy Award in 2020. His research has been recognized for its impact, evidenced by his article being selected as the Top Downloaded Article in Physica Status Solidi in 2022. Additionally, he has earned multiple Best Presentation Awards at various international conferences, highlighting his contributions to the field of materials science and engineering.
Publication Top Notes:
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Resistive Random-Access Memories Using Quasi-2D Halide Perovskites for Wafer-Scale Reliable Switching Behaviors
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2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems
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Two-Dimensional Perovskite Heterostructures for Single Crystal Semiconductor Devices