Dr. young wook park | semiconductor Awards | Best Researcher Award

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Dr. young wook park | semiconductor Awards | Best Researcher Award

Dr. young wook park, hanyang university, South Korea

Dr. Young Wook Park is a Research Professor in the Division of Materials Science and Engineering at Hanyang University, a position he has held since July 2021. With extensive industry experience, he served as Vice President at Micron Technology from March 2017 to January 2021 and held the role of Senior Vice President at Samsung Electronics from April 1991 to March 2017. Dr. Park earned his Ph.D. in Materials Science and Engineering from KAIST in 1991, following a Master’s degree in the same field from KAIST in 1988, and a Bachelor’s degree in Metallurgy from Seoul National University in 1986. He has filed over 50 patents in the U.S., highlighting his significant contributions to the field of materials science.

Professional Profile:

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 Dr. Young Wook Park for the Research for Best Researcher Awards

Dr. Young Wook Park’s extensive academic and professional background makes him a highly suitable candidate for the Research for Best Researcher Awards. His experience spans over three decades in the fields of materials science and engineering, particularly within prominent organizations and academic institutions.

🎓Education:

Dr. Young Wook Park earned his Ph.D. in Materials Science and Engineering from KAIST, Korea, in February 1991. He also holds a Master’s degree in the same field from KAIST, which he completed in February 1988. Prior to that, he obtained his Bachelor’s degree in Metallurgy from Seoul National University, Korea, in February 1986.

🏢Work Experience:

Dr. Young Wook Park is currently a Research Professor in the Division of Materials Science and Engineering at Hanyang University, a role he has held since July 2021. Prior to this, he served as Vice President at Micron Technology from March 2017 to January 2021, where he contributed to advancements in semiconductor technology. Before joining Micron, Dr. Park was the Senior Vice President at Samsung Electronics from April 1991 to March 2017, playing a key role in the company’s growth and innovation in the electronics industry.

Publication Top Notes:

  • Title: Method of forming thin film using atomic layer deposition method

    Citations: 230

  • Title: Semiconductor device and method for manufacturing the same

    Citations: 79

  • Title: Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby

    Citations: 60

  • Title: Novel capacitor technology for high density stand-alone and embedded DRAMs

    Citations: 50

  • Title: Methods of forming integrated circuit capacitors having doped HSG electrodes

    Citations: 46

 

 

Prof. Hyojung Kim | Semiconductor Awards | Outstanding Scientist Award

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Prof. Hyojung Kim | Semiconductor Awards | Outstanding Scientist Award

Prof. Hyojung Kim, Sejong University, South Korea

Hyojung Kim, Ph.D. is an Assistant Professor in the Department of Semiconductor Systems Engineering at Sejong University, South Korea. He earned his Ph.D. in Materials Science and Engineering from Seoul National University in February 2021, focusing on resistive switching memory devices utilizing 2D and quasi-2D halide perovskites. With a solid foundation in chemical engineering from Sungkyunkwan University, Dr. Kim has made significant contributions to the field, evidenced by numerous publications in high-impact journals and multiple patents related to resistive switching memory technologies. His research interests include the development of flexible memory devices and FET transistors based on halide perovskites. Dr. Kim has received several accolades, including the YANGSONG Researcher Award and recognition for his top-downloaded article in Physica Status Solidi. He has also presented his findings at various international conferences, showcasing his expertise in advanced memory devices.

Professional Profile:

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Summary of Suitability for Outstanding Scientist Award: Dr. Hyojung Kim

Overview
Dr. Hyojung Kim is an exemplary candidate for the Outstanding Scientist Award due to his remarkable contributions to the field of semiconductor systems engineering, particularly in the development of advanced memory devices utilizing 2D and quasi-2D halide perovskites. As an Assistant Professor at Sejong University, South Korea, he has demonstrated a commitment to innovation and excellence in research, establishing himself as a leader in his field.

🎓Education:

Hyojung Kim, Ph.D., obtained his Ph.D. in Materials Science and Engineering from Seoul National University, Seoul, South Korea, in February 2021. His doctoral thesis focused on “Resistive Switching Memory Devices based on 2D and Quasi-2D Halide Perovskites,” under the supervision of Ho Won Jang. Prior to this, he completed his Master’s in Chemical Engineering at Sungkyunkwan University, Suwon, South Korea, in February 2013, with a thesis titled “The Study of Pt-free Counter Electrode for Dye-Sensitized Solar Cell,” supervised by Jong Hyeok Park. Dr. Kim also holds a Bachelor’s degree in Chemical Engineering from Sungkyunkwan University, which he received in August 2008.

🏢Work Experience:

Hyojung Kim, Ph.D., served as a Postdoctoral Research Associate at the Davidson School of Chemical Engineering at Purdue University from 2022 to 2023. Prior to this role, he held another postdoctoral position in the Department of Materials Science and Engineering at Seoul National University from 2021 to 2022. Additionally, Dr. Kim gained valuable research experience as an Intern Researcher at the Korea Institute of Science and Technology from 2016 to 2017.

🏅Awards and Recognitions:

Dr. Hyojung Kim has received several prestigious awards, including the YANGSONG Researcher Award from the Korean Ceramic Society in 2021 and the Minister of Trade, Industry and Energy Award in 2020. His research has been recognized for its impact, evidenced by his article being selected as the Top Downloaded Article in Physica Status Solidi in 2022. Additionally, he has earned multiple Best Presentation Awards at various international conferences, highlighting his contributions to the field of materials science and engineering.

Publication Top Notes:

  • Resistive Random-Access Memories Using Quasi-2D Halide Perovskites for Wafer-Scale Reliable Switching Behaviors
  • 2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems
  • Two-Dimensional Perovskite Heterostructures for Single Crystal Semiconductor Devices