Dr. young wook park | semiconductor Awards | Best Researcher Award

Dr. young wook park | semiconductor Awards | Best Researcher Award

Dr. young wook park, hanyang university, South Korea

Dr. Young Wook Park is a Research Professor in the Division of Materials Science and Engineering at Hanyang University, a position he has held since July 2021. With extensive industry experience, he served as Vice President at Micron Technology from March 2017 to January 2021 and held the role of Senior Vice President at Samsung Electronics from April 1991 to March 2017. Dr. Park earned his Ph.D. in Materials Science and Engineering from KAIST in 1991, following a Master’s degree in the same field from KAIST in 1988, and a Bachelor’s degree in Metallurgy from Seoul National University in 1986. He has filed over 50 patents in the U.S., highlighting his significant contributions to the field of materials science.

Professional Profile:

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 Dr. Young Wook Park for the Research for Best Researcher Awards

Dr. Young Wook Park’s extensive academic and professional background makes him a highly suitable candidate for the Research for Best Researcher Awards. His experience spans over three decades in the fields of materials science and engineering, particularly within prominent organizations and academic institutions.

🎓Education:

Dr. Young Wook Park earned his Ph.D. in Materials Science and Engineering from KAIST, Korea, in February 1991. He also holds a Master’s degree in the same field from KAIST, which he completed in February 1988. Prior to that, he obtained his Bachelor’s degree in Metallurgy from Seoul National University, Korea, in February 1986.

🏢Work Experience:

Dr. Young Wook Park is currently a Research Professor in the Division of Materials Science and Engineering at Hanyang University, a role he has held since July 2021. Prior to this, he served as Vice President at Micron Technology from March 2017 to January 2021, where he contributed to advancements in semiconductor technology. Before joining Micron, Dr. Park was the Senior Vice President at Samsung Electronics from April 1991 to March 2017, playing a key role in the company’s growth and innovation in the electronics industry.

Publication Top Notes:

  • Title: Method of forming thin film using atomic layer deposition method

    Citations: 230

  • Title: Semiconductor device and method for manufacturing the same

    Citations: 79

  • Title: Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby

    Citations: 60

  • Title: Novel capacitor technology for high density stand-alone and embedded DRAMs

    Citations: 50

  • Title: Methods of forming integrated circuit capacitors having doped HSG electrodes

    Citations: 46

 

 

Dr. Shizhao Fan | Semiconductors Awards | Best Researcher Award

Dr. Shizhao Fan | Semiconductors Awards | Best Researcher Award

Dr. Shizhao Fan, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

Shizhao Fan is an Associate Professor at the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, where he leads the ScAlN Compound Semiconductor Growth & Micro-Structure Regulation Laboratory. With over 10 years of experience in III-V and III-Nitride semiconductor epitaxy and device fabrication, he has made significant contributions to the field, including the development of world-record efficiency tandem solar cells. Shizhao holds a Ph.D. in Electrical and Computer Engineering from McGill University, where he was awarded the Lorne Trottier Engineering Fellowship. He is recognized for his pioneering work on Sc0.37Al0.63N ferroelectric thin films and currently leads a National Natural Science Foundation of China project. His research focuses on enhancing device performance through advanced epitaxial growth techniques and he serves as a guest editor for the journal Nanomaterials.

Professional Profile:

Scopus

Researcher Suitability Summary for Shizhao Fan for the Best Researcher Awards

Shizhao Fan exemplifies the qualities of a leading researcher suitable for the Best Researcher Awards. His extensive research experience, innovative contributions to semiconductor technology, and leadership in significant scientific projects position him as a pioneer in his field. His commitment to advancing technology for enhanced energy efficiency aligns with the goals of sustainability and innovation, making him an outstanding candidate for this recognition.

🎓Education:

Shizhao Fan obtained his Ph.D. in Electrical and Computer Engineering from McGill University in Montreal, QC, Canada, where he studied from September 2011 to August 2016 under the supervision of Prof. Zetian Mi. During his doctoral studies, he was awarded the prestigious Lorne Trottier Engineering Fellowship. Prior to that, he earned his B.S. in Electrical and Computer Engineering from the University of Science and Technology of China (USTC) in Hefei, China, from September 2007 to June 2011, graduating in the top 10% of his class with a GPA of 3.75 out of 4.30.

🏢Work Experience:

Shizhao Fan currently serves as an Associate Professor at the Suzhou Institute of Nano-Tech and Nano-Bionics, part of the Chinese Academy of Sciences, a position he has held since September 2020. He is involved in several prestigious programs, including the Hundred Talent Program, Jiangsu Province Dual Innovation Talent, and the Suzhou Young Leader initiative. Prior to this role, he was a Postdoctoral Researcher in Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign (UIUC) from September 2016 to August 2020, where he worked under the guidance of Prof. Larry Minjoo Lee. During his postdoctoral research, he achieved a significant milestone by developing 25%-efficient epitaxial GaAs0.7P0.3/Si tandem solar cells, setting a world record for efficiency.

Publication Top Notes:

  • Observation of Threading Dislocations and Misfit Dislocation Half-Loops in GaN/AlGaN Heterostructures Grown on Si Using Electron Channeling Contrast Imaging
    • Citations: 4
  • Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD
    • Citations: 4
  • Delta-Doping for Enhanced III-V Tunnel Junction Performance
    • Citations: 1
  • Improving the Performance of GaInP Solar Cells Through Rapid Thermal Annealing and Delta Doping
    • Citations: 6
  • GaN-Based Distributed Feedback Laser Diodes Grown on Si
    • Citations: 2