Prof. Taehui Na, Incheon National University, South Korea
Dr. Na Taehui is an Associate Professor in the Department of Electronics Engineering at Incheon National University, where he has been since September 2023, after serving as an Assistant Professor from 2019 to 2023. He earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University in February 2017, focusing on optimal reference and offset-tolerant sensing schemes for deep submicrometer STT-RAM. Dr. Na has a robust professional background, having previously worked as a Staff Engineer at Samsung Electronics. His research interests encompass various aspects of memory technology, including spin-transfer-torque MRAM and computing-in-memory systems, with multiple publications in esteemed journals. Throughout his academic journey, he has received several accolades, including the BK21 Outstanding Student Fellow Award and the Samsung Scholarship
Professional Profile:
Google Scholar
Summary of Suitability:
Dr. Na Taehui is a commendable candidate for the Best Researcher Award due to his significant contributions to the field of electronics engineering, particularly in memory technology. As an Associate Professor in the Department of Electronics Engineering at Incheon National University, he has demonstrated a commitment to both education and research since September 2023, following a successful tenure as an Assistant Professor from 2019 to 2023.
šEducation:
Dr. Na Taehui earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University, Seoul, Korea, in February 2017. His dissertation, titled “Optimal Reference Scheme and Offset Tolerant Sensing Scheme for Deep Submicrometer STT-RAM,” focused on advancing memory technology. Prior to this, he completed his Bachelor of Science in Electrical and Electronic Engineering at the same institution, graduating in February 2012.
š¢Work Experience:
Dr. Na Taehui is currently serving as an Associate Professor in the Department of Electronics Engineering at Incheon National University, a position he has held since September 2023. Prior to this role, he was an Assistant Professor in the same department from September 2019 to August 2023. Before entering academia, Dr. Na worked as a Staff Engineer in the Flash Design Team of the Memory Division at Samsung Electronics from March 2017 to August 2019.
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Awards:
Dr. Na Taehui has received several prestigious awards throughout his academic career, including the BK21 Outstanding Student Fellow Award from Yonsei University in 2015. He was also a recipient of the Samsung Scholarship from 2014 to 2017, supporting his doctoral studies. Additionally, Dr. Na was awarded Research Assistantships at Yonsei University in 2012, 2013, and 2014. He consistently excelled in his studies, earning the Highest Honors from Yonsei University in both 2010 and 2011.
š¬Research Focus:
Dr. Na’s research primarily focuses on memory technology, with a particular emphasis on Spin-Transfer-Torque (STT) MRAM and computing-in-memory systems. He is dedicated to developing optimal reference and offset-tolerant sensing schemes for advanced memory applications, aiming to enhance performance and efficiency. His contributions to the field are well-documented through multiple articles published in high-impact journals, further advancing the understanding of electronics and memory technologies.
Publication Top Notes:
- Comparative Study of Various Latch-Type Sense Amplifiers
- STT-MRAM Sensing: A Review
- A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and Compact Area
- Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM
- Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS