Mr. Vinod Vanarse | Nano Fluidic Awards |

Mr. Vinod Vanarse | Nano Fluidic Awards | Best Researcher Award

Mr. Vinod Vanarse , Indian Institute of Technology Guwahati , India

Vinod B. Vanarse is a dedicated Ph.D. candidate in Chemical Engineering at the Indian Institute of Technology, Guwahati, specializing in field-induced interfacial instabilities in open-confined Âľ-systems. He holds an M.Tech in Chemical Engineering from NIT Durgapur and a B.E. in Chemical Engineering from JNEC, Aurangabad. With significant industry experience, Vinod has worked as a Senior Executive in the Crop Protection Division at ATUL Ltd. and as a Jr. Executive in the Solvent Recovery Division at Hospira Healthcare Pvt. Ltd. His research contributions include several high-impact publications and presentations at international conferences. Proficient in various programming and simulation software, Vinod also has extensive experience with analytical instruments. He has been a Teaching Assistant for multiple courses, demonstrating his commitment to both research and education in the field of chemical engineering.

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Summary of Suitability for the Research for Best Researcher Award

  • Innovative Research: Vinod is actively pursuing a Ph.D. in Chemical Engineering at IIT Guwahati, focusing on “Field-Induced Interfacial Instabilities in Open-Confined Âľ-Systems,” showcasing his ability to tackle complex, cutting-edge problems.
  • Significant Publications: His work has been published in high-impact journals such as Physics of Fluids, Industrial & Engineering Chemistry Research, and Processes. Notable papers include investigations into instability modes at solvent/non-solvent interfaces and electroosmotic micromixing in patterned microchannels.
  • Conference Presentations: Vanarse has presented his research at prestigious conferences including the BIFD-2024 in Scotland and the Indo-German Workshop-2024. His work on microdroplet sensors and mesoscopic structures in porous media underscores his research’s impact and relevance.

🎓Education:

Vinod B. Vanarse is currently pursuing a Ph.D. in Chemical Engineering at the Indian Institute of Technology, Guwahati, where he focuses on “Field-Induced Interfacial Instabilities in Open-Confined Âľ-Systems” under the guidance of Prof. Dipankar Bandyopadhyay and Prof. T. K. Mandal. He holds an M.Tech in Chemical Engineering from NIT Durgapur, achieved with a CGPA of 8.63. His foundational education includes a B.E. in Chemical Engineering from JNEC, Aurangabad, with a percentage of 67%. Vinod completed his Higher Secondary Certificate (HSC) with 66.0% from the HSC Board, Pune, and his Secondary School Certificate (SSC) with 79.60% from the SSC Board, Pune.

🏢Work Experience:

Vinod B. Vanarse worked as a Senior Executive in the Production (Crop Protection) Division at ATUL Ltd. in Valsad, Gujarat, from January 2015 to December 2016. In this role, he served as the Technical Team Lead for Product Formulation and managed the Legal Advisory Committee. Prior to this, he was a Jr. Executive in the Production (Solvent Recovery (SRP)) Division at Hospira Healthcare Pvt. Ltd. in Aurangabad, Maharashtra, from August 2012 to December 2014. His responsibilities there included overseeing distillation operations, acting as Shift-Incharge, and leading the Safety Team.

Publication Top Notes:

  • Coupled instability modes at a solvent/non-solvent interface to decorate cellulose acetate flowers

    Cited by: 2

  • Electroosmotic Micromixing in Physicochemically Patterned Microchannels

    Cited by: 1

  • Controlled Micro–Nano-Scale Droplet Generation via Spin Dewetting
  • Forming flower-like fingers with fluid instabilities
  • Microdroplet sensor for point-of-care-testing of glycemic index using gold-amylase nanocomposite

 

 

 

Dr. Gyungtae Kim | Nanoscale Awards | Excellence in Research

Dr. Gyungtae Kim | Nanoscale Awards | Excellence in Research

Dr. Gyungtae Kim ,National nanofab center , South Korea

Gyungtae Kim is a principal researcher at the National Nanofab Center in the Department of Measurement & Analysis, specializing in nanoscale characterization and surface analysis. Born on July 17, 1977, in South Korea, he earned his Ph.D. in Electronics, Radio Sciences & Engineering and Information Communications from Chungnam National University in February 2016. He has extensive experience in the semiconductor industry, having worked as a senior engineer at SK Hynix from 2004 to 2011 before joining the National Nanofab Center. Over his 13-year research career, he has contributed significantly to the field of semiconductor metrology, with key expertise in surface and X-ray analysis. His research has resulted in numerous publications in high-impact journals and involvement in several high-profile projects. Gyungtae is also an active member of several academic committees and has presented his work at major international conferences.

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Suitability for Excellence in Research Award: Gyungtae Kim

Gyungtae Kim is a highly qualified researcher with extensive experience in the field of nanoscale characterization. His educational background, professional experience, and significant contributions to research and development make him a strong candidate for the Excellence in Research Award.

🎓Education:

Gyungtae Kim holds a Ph.D. in Electronics, Radio Sciences & Engineering and Information Communications from Chungnam National University, completed in February 2016. His doctoral thesis, titled “Reliable Electro-Thermal Modeling and Characterization for Highly Uniform Amorphous-Silicon Microbolometer,” was supervised by Prof. Hyoungho Ko. Prior to his Ph.D., he earned a Master’s degree in the same field from Chungnam National University in February 2014. He also holds a Bachelor’s degree in Electronics Engineering from Inha University, which he completed in February 2004.

🏢Work Experience:

Gyungtae Kim is a Principal Researcher in the Department of Measurement & Analysis at the National Nanofab Center, a position he has held since 2016. His key experiences in this role include surface analysis, X-ray analysis, and semiconductor metrology. Prior to this, he served as a Senior Researcher in the Semiconductor Device Department at the same institution from 2011 to 2016. Before joining the National Nanofab Center, Gyungtae worked as a Senior Engineer at SK Hynix from 2004 to 2011, where he gained substantial industry experience.

🏅Conferences and Presentations:

Gyungtae has presented his work at major international conferences such as the European Conference on X-ray Spectrometry (EXRS) and the Korean Physical Society (KPS) Fall Meeting, among others. His contributions to these conferences have focused on advancements in semiconductor metrology and surface analysis techniques

 

Publication Top Notes:

  • Nano-mapping of vertical contact electrodes using synchrotron scanning photoelectron microscopy
  • Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis
  • Stabilizing a lithium metal anode through the sustainable release of a multi-functional AgNO3 additive
  • Controlled adsorption of gas molecules by tuning porosity of titanium film
  • Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM

    Cited by: 2

 

Prof. Vadim Galakhov | Nanoscale Awards | Best Researcher Award

Prof. Vadim Galakhov | Nanoscale Awards | Best Researcher Award

Prof. Vadim Galakhov , M. N. Mikheev Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences , Russia

Vadim Rostislavovich Galakhov, born on August 23, 1952, is a prominent Russian physicist renowned for his contributions to X-ray emission, absorption, and photoelectron spectroscopy, as well as solid-state physics focusing on electronic structures of oxides, superconductors, and nanomaterials. He completed his education at Ural State University, where he studied physics from 1969 to 1974, followed by postgraduate studies at the Institute of Metal Physics from 1981 to 1985, culminating in a Ph.D. in physical and mathematical sciences in 1986 and later a Doctor of physical and mathematical sciences (Dr. habil.) in 2002. Throughout his career, Vadim has held various positions including Senior Researcher and Professor roles at institutions such as the Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences and Ural State Mining University. He has authored 160 papers, presented about 60 talks at conferences, and holds an h-index of 22. Vadim has led numerous research projects funded by prestigious organizations like the Russian Foundation for Basic Research and collaborated on international projects with organizations such as DAAD and DFG, receiving scholarships from DFG in 1993 and DAAD in 2004.

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🎓Education:

Vadim Rostislavovich Galakhov pursued an illustrious academic journey in physics, beginning with his Bachelor’s degree at Ural State University from 1969 to 1974. He continued his studies with postgraduate research at the Institute of Metal Physics from 1981 to 1985, where he later earned his Ph.D. in Physical and Mathematical Sciences in 1986. His academic pursuits culminated in a Doctor of Physical and Mathematical Sciences (Dr. habil.) degree from the same institute in 2002. Throughout his educational career, Vadim focused on advancing his expertise in solid-state physics, particularly in areas such as X-ray emission, absorption, and photoelectron spectroscopy, as well as the electronic structures of oxides, superconductors, and nanomaterials.

🏢Work Experience:

Vadim Rostislavovich Galakhov has held a distinguished career in academia and research spanning several decades. Beginning as an Engineer at the X-ray laboratories of Bashkir State University and later at the Institute of Metal Physics – Ural Division of the Academy of Sciences of the USSR, he gradually advanced through roles including Junior Researcher and Researcher from 1979 to 1988. His expertise and dedication led him to positions as a Senior Researcher at the Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, where he contributed significantly from 1988 to 2002. Vadim then assumed the role of Chief Researcher (Professor) at the M. N. Mikheev Institute of Metal Physics, a position he has held since 2008. Concurrently, he served as a Professor at both Ural State Mining University since 2003 and Ural State University from 2008 to 2011. Throughout his career, Vadim has been instrumental in advancing research in X-ray emission, absorption, and photoelectron spectroscopy, solid-state physics, and the electronic structures of oxides, superconductors, and nanomaterials.

Publication Top Notes:

  • Electronic States of Cobalt Ions in EuBaCo2O5 + δ Layered Cobaltites
    • Authors: Udintseva, M.S., Efremov, A.V., Smirnov, D., Shamin, S.N., Galakhov, V.R.
    • Journal: JETP Letters
    • Citations: 1
  • Magnetic Properties, Electron Paramagnetic Resonance, and Photoelectron Spectroscopy Studies of Nanocrystalline TiO2 Co-Doped with Al and Fe
    • Authors: Yermakov, A.Y., Galakhov, V.R., Minin, A.S., Gaviko, V.S., Zakharova, G.S.
    • Journal: Physica Status Solidi (B) Basic Research
    • Citations: 3
  • Magnetic properties and electronic structure of CeFe2−xMnx and CeFe2Mnx compounds
    • Authors: Naumov, S.P., Mushnikov, N.V., Terentev, P.B., Kuepper, K., Vagizov, F.G.
    • Journal: Journal of Alloys and Compounds
    • Citations: 2
  • X-Ray Spectroscopy of Cobaltites
    • Authors: Galakhov, V.R.
    • Journal: Physics of Metals and Metallography
    • Citations: 3
  • Magnetic and Electronic Properties of Highly Mn-Doped β-NaGdF4and β-NaEuF4Nanoparticles with a Narrow Size Distribution
    • Authors: Schneider, L., Wehmeier, J., Wiedwald, U., Haase, M., Kuepper, K.
    • Journal: Journal of Physical Chemistry C
    • Citations: 9