Prof. Taehui Na | NanoElectronics Awards | Best Researcher Award

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Prof. Taehui Na | NanoElectronics Awards | Best Researcher Award

Prof. Taehui Na, Incheon National University, South Korea

Dr. Na Taehui is an Associate Professor in the Department of Electronics Engineering at Incheon National University, where he has been since September 2023, after serving as an Assistant Professor from 2019 to 2023. He earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University in February 2017, focusing on optimal reference and offset-tolerant sensing schemes for deep submicrometer STT-RAM. Dr. Na has a robust professional background, having previously worked as a Staff Engineer at Samsung Electronics. His research interests encompass various aspects of memory technology, including spin-transfer-torque MRAM and computing-in-memory systems, with multiple publications in esteemed journals. Throughout his academic journey, he has received several accolades, including the BK21 Outstanding Student Fellow Award and the Samsung Scholarship

Professional Profile:

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Summary of Suitability:

Dr. Na Taehui is a commendable candidate for the Best Researcher Award due to his significant contributions to the field of electronics engineering, particularly in memory technology. As an Associate Professor in the Department of Electronics Engineering at Incheon National University, he has demonstrated a commitment to both education and research since September 2023, following a successful tenure as an Assistant Professor from 2019 to 2023.

🎓Education:

Dr. Na Taehui earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University, Seoul, Korea, in February 2017. His dissertation, titled “Optimal Reference Scheme and Offset Tolerant Sensing Scheme for Deep Submicrometer STT-RAM,” focused on advancing memory technology. Prior to this, he completed his Bachelor of Science in Electrical and Electronic Engineering at the same institution, graduating in February 2012.

🏢Work Experience:

Dr. Na Taehui is currently serving as an Associate Professor in the Department of Electronics Engineering at Incheon National University, a position he has held since September 2023. Prior to this role, he was an Assistant Professor in the same department from September 2019 to August 2023. Before entering academia, Dr. Na worked as a Staff Engineer in the Flash Design Team of the Memory Division at Samsung Electronics from March 2017 to August 2019.

🏅Awards:

Dr. Na Taehui has received several prestigious awards throughout his academic career, including the BK21 Outstanding Student Fellow Award from Yonsei University in 2015. He was also a recipient of the Samsung Scholarship from 2014 to 2017, supporting his doctoral studies. Additionally, Dr. Na was awarded Research Assistantships at Yonsei University in 2012, 2013, and 2014. He consistently excelled in his studies, earning the Highest Honors from Yonsei University in both 2010 and 2011.

🔬Research Focus:

Dr. Na’s research primarily focuses on memory technology, with a particular emphasis on Spin-Transfer-Torque (STT) MRAM and computing-in-memory systems. He is dedicated to developing optimal reference and offset-tolerant sensing schemes for advanced memory applications, aiming to enhance performance and efficiency. His contributions to the field are well-documented through multiple articles published in high-impact journals, further advancing the understanding of electronics and memory technologies.

Publication Top Notes:

  1. Comparative Study of Various Latch-Type Sense Amplifiers
    • Cited by: 104
  2. STT-MRAM Sensing: A Review
    • Cited by: 79
  3. A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and Compact Area
    • Cited by: 64
  4. Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM
    • Cited by: 54
  5. Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS
    • Cited by: 51

 

 

 

Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

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Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

Prof. Dr. Plamen Petkov , UCTM , Bulgaria

Plamen Petkov, a Bulgarian national born on January 8, 1959, is a distinguished Professor of Physics at the University of Chemical Technology and Metallurgy in Sofia, Bulgaria. With a career spanning from 1985 to the present, he currently serves as the Head of the Thin Films Technology Laboratory and the Physics Department. Petkov holds a Dipl. Eng. (MSc in Semiconductors) from UCTM Sofia and a PhD in Solid State Physics. His extensive experience includes research stints at RWTH Aachen and the University of Odense, specializing in Thin Film Technology. A prolific author, Petkov has published six books and over 165 papers. He is a member of several scientific societies and has coordinated numerous research projects and academic programs. Additionally, he is the Editor in Chief of the journal “Advance in Natural Science: Theory and Applications.” His scientific interests focus on chalcogenide thin films, nanostructured materials, and energy and optical storage.

Professional Profile:

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📚Education:

Plamen Petkov holds an MSc in Semiconductors from the University of Chemical Technology and Metallurgy in Sofia, Bulgaria (1976-1981). He further specialized in Thin Film Technology at the Physics Department of RWTH Aachen in Germany (1993-1995) and earned a PhD in Solid State Physics from the same university in 1995. Additionally, he undertook specialization in Thin Film Technology at the University of Odense in Denmark (1998-1999) and Thin Films at the University of Aachen in Germany (2001-2002)

🏢🔬Work Experience:

Plamen Petkov has been an integral part of the University of Chemical Technology and Metallurgy in Sofia, Bulgaria since 1985. Initially starting as a Researcher and Professor in Physics, his expertise in the field has been instrumental in shaping the academic landscape. Since 2000, he has taken on the role of Head of Laboratory at the Thin Films Technology Lab, where his leadership has propelled research endeavors forward. Additionally, since 2009, he has assumed the responsibility of leading the Physics Department, overseeing its academic and administrative facets. In these roles, Plamen has been pivotal in supervising research initiatives, contributing to the faculty board and academic council, and spearheading numerous national and international research projects. His commitment to academic excellence is further demonstrated through his supervision of Ph.D. and M.S. theses, ensuring the growth and development of future scientists in the field.

Publication Top Notes:

  1. Title: An interpretation of optical properties of oxides and oxide glasses in terms of the electronic ion polarizability and average single bond strength
    • Published Year: 2010
    • Journal: J. Univ. Chem. Technol. Metall
    • Cited By: 523
  2. Title: Measurement of the cross section and angular correlations for associated production of a Z boson with b hadrons in pp collisions at √s = 7 TeV
    • Published Year: 2013
    • Journal: Journal of High Energy Physics
    • Cited By: 214*
  3. Title: Electrode-limited currents in the thin-film MGeSeM system
    • Published Year: 1989
    • Journal: Materials Chemistry and Physics
    • Cited By: 198
  4. Title: Measurement of the associated production of a single top quark and a Z boson in pp collisions at √s= 13 TeV
    • Published Year: 2018
    • Journal: Physics Letters B
    • Cited By: 132
  5. Title: Suppression of γ and Z production in PbPb collisions at √s= 2.76 TeV
    • Published Year: 2017
    • Journal: Physics Letters B
    • Cited By: 123

 

 

 

Mr. Halil SEYMEN | Nanoelectronics Awards | Best Researcher Award

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Mr. Halil SEYMEN | Nanoelectronics Awards | Best Researcher Award

Mr. Halil SEYMEN , Muş Alparslan Universty , Turkey

Halil Seymen is a dedicated academic and researcher with extensive experience in the field of material science and engineering. Holding a Ph.D. from Kahramanmaraş Sütçü İmam University and having pursued doctoral studies at Bingöl University, his research focuses on optoelectronic materials and semiconductor physics. With a background in physics from Yüzüncü Yıl University and Atatürk University, Halil has contributed significantly to the field through his work as a lecturer at Muş Alparslan University. His research, which includes investigations into the electrical and photonic properties of semiconductor structures, has been published in reputable journals. Halil’s expertise extends to teaching, where he shares his knowledge and passion for physics with students, and he actively engages in academic activities to further scientific understanding and technological advancement.

Professional Profile:

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📚 Education:

Halil Seymen’s academic journey reflects a commitment to advancing knowledge in the fields of physics and material science. He holds a Ph.D. in Material Science and Engineering from Kahramanmaraş Sütçü İmam University, Turkey, where he delved into the intricate realms of materials and their engineering applications. Prior to this, he pursued a Ph.D. in Physics at Bingöl University, Turkey, further enriching his understanding of fundamental physical principles. Halil’s educational foundation includes a Master of Science (M.Sc) degree in Physics from Yüzüncü Yıl University and a Bachelor of Science (B.Sc) in Physics from Atatürk University, both in Turkey. This diverse educational background has equipped him with a comprehensive grasp of both theoretical concepts and practical applications in the fields of physics and material science. Through his academic pursuits, Halil Seymen continues to contribute to the advancement of scientific knowledge and technological innovation.

👨‍🏫 Work Experience:

Halil Seymen has played pivotal roles in both academia and education in Turkey. Currently serving as an Assistant Professor at Muş Alparslan University, he contributes to the academic landscape by imparting knowledge and mentoring students in his areas of expertise. Prior to this, Halil worked as a Teacher for the Ministry of National Education in Turkey, where he played a vital role in shaping the educational experiences of students. His dedication to both teaching and research underscores his commitment to fostering intellectual growth and contributing to the development of future generations.

🔬 Research Focus:

Halil Seymen’s research interests encompass a wide array of cutting-edge topics within the realm of materials science and engineering. His expertise spans across diverse fields, including optoelectronic materials, polymer materials, graphene oxide, and nanomaterials. With a focus on experimental solid-state physics, Halil explores the fundamental properties and behaviors of materials at the atomic and molecular levels. His research endeavors aim to advance our understanding of material properties and pave the way for the development of innovative technologies with applications in various industries. Through his multidisciplinary approach, Halil Seymen contributes significantly to the advancement of material science and engineering.

Publication Top Notes:

  1. Investigation of electrical, photodiode and photovoltaic properties of Au/SiO2/n-Si structures with GO and P3C4MT interface
    Seymen, H., Karataş, S.
    Materials Chemistry and Physics, 2023, 310, 128449.
    Citations: 1
  2. Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer
    Seymen, H., Berk, N., Orak, İ., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2022, 33(24), pp. 19656–19666.
    Citations: 9
  3. The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures
    Berk, N., Seymen, H., Orak, İ., Karataş, Ş.
    Journal of Physics and Chemistry of Solids, 2022, 160, 110348.
    Citations: 14
  4. The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface
    Berk, N., Seymen, H., Orak, I., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2021, 32(13), pp. 17500–17511.
    Citations: 11
  5. Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures
    Kılçık, A., Berk, N., Seymen, H., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2021, 32(6), pp. 7913–7925.
    Citations: 17