Dr. Xiaoci Liang | Microelectronics | Best Researcher Award

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Dr. Xiaoci Liang | Microelectronics | Best Researcher Award

Dr. Xiaoci Liang , Sun Yat-sen University, China

Dr. Xiaoci Liang is a postdoctoral researcher at Sun Yat-sen University, specializing in microelectronics and solid-state electronics. His research focuses on oxide thin-film transistors and electrolyte-gated transistors for neuromorphic computing and resistive random-access memory (RRAM). He has published multiple high-impact papers in journals like Nature Electronics and The Journal of Physical Chemistry Letters. Dr. Liang is the principal investigator for two prestigious research projects funded by the Natural Science Foundation of China and the China National Postdoctoral Program for Innovative Talents. His work contributes to advancing high-speed, low-power transistor technologies. āš”šŸ”¬

Professional Profile:

Scopus

Suitability for Best Researcher Award šŸ†

Dr. Xiaoci Liang is a strong candidate for the Best Researcher Award, given his pioneering contributions to microelectronics, neuromorphic computing, and next-generation memory technologies. His work on oxide thin-film transistors, electrolyte-gated transistors, and resistive random-access memory (RRAM) has the potential to revolutionize low-power, high-speed electronic components for AI-driven applications.

Education & Experience šŸŽ“

  • šŸ“ 2023 ā€“ Present: Postdoctoral Researcher, Sun Yat-sen University

  • šŸŽ“ 2023: Ph.D. in Microelectronics and Solid-State Electronics, Sun Yat-sen University

  • šŸŽ“ 2019: M.E. in Microelectronics and Solid-State Electronics, Sun Yat-sen University

  • šŸŽ“ 2016: B.E. in Microelectronics, Sun Yat-sen University

Professional Development šŸš€

Dr. Xiaoci Liang is an emerging expert in thin-film transistors and neuromorphic computing, contributing to cutting-edge advancements in low-power and high-speed electronic devices. šŸ“” His research focuses on electrolyte-gated transistors, exploring their role in artificial synapses and next-generation memory applications. šŸ§ šŸ’” He has secured competitive funding to develop innovative transistor technologies, leading two significant national projects. šŸ… His work has been published in top-tier journals, earning him recognition in the microelectronics community. šŸŒ With expertise in material engineering and device physics, he is shaping the future of electronic components for AI-driven applications. šŸ¤–šŸ”¬

Research Focus šŸ”

Dr. Liangā€™s research is centered on neuromorphic computing and next-generation memory devices. šŸ§ šŸ’¾ His expertise in oxide thin-film transistors (TFTs) and electrolyte-gated transistors (EGTs) allows him to design high-speed, low-power electronic components for artificial intelligence applications. šŸš€ His studies in pseudocapacitance, faradaic charge transfer, and defect engineering aim to enhance energy-efficient transistors and synaptic devices. āš™ļøšŸ”‹ Through groundbreaking research, he is advancing hardware-based neural networks for AI and Internet of Things (IoT) technologies. šŸŒ His contributions to resistive random-access memory (RRAM) and artificial synaptic devices are shaping the future of intelligent electronics. šŸ’”šŸ“”

Awards & Honors šŸ…

  • šŸ† Principal Investigator ā€“ Natural Science Foundation of China Grant (62404255)

  • šŸ† Principal Investigator ā€“ China National Postdoctoral Program for Innovative Talents Grant (BX20230439)

  • šŸ“œ Published in High-Impact Journals ā€“ Nature Electronics, The Journal of Physical Chemistry Letters, Applied Physics Letters

  • šŸ… Recognition in Neuromorphic Computing ā€“ Contributions to artificial synaptic devices

  • šŸŒ Emerging Research Leader ā€“ Advancing oxide transistors and AI-driven microelectronics

Publication Top Notes:

šŸ“„ “Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors”

šŸ“„ “Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process”

Prof. Taehui Na | NanoElectronics Awards | Best Researcher Award

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Prof. Taehui Na | NanoElectronics Awards | Best Researcher Award

Prof. Taehui Na, Incheon National University, South Korea

Dr. Na Taehui is an Associate Professor in the Department of Electronics Engineering at Incheon National University, where he has been since September 2023, after serving as an Assistant Professor from 2019 to 2023. He earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University in February 2017, focusing on optimal reference and offset-tolerant sensing schemes for deep submicrometer STT-RAM. Dr. Na has a robust professional background, having previously worked as a Staff Engineer at Samsung Electronics. His research interests encompass various aspects of memory technology, including spin-transfer-torque MRAM and computing-in-memory systems, with multiple publications in esteemed journals. Throughout his academic journey, he has received several accolades, including the BK21 Outstanding Student Fellow Award and the Samsung Scholarship

Professional Profile:

Google Scholar

Summary of Suitability:

Dr. Na Taehui is a commendable candidate for the Best Researcher Award due to his significant contributions to the field of electronics engineering, particularly in memory technology. As an Associate Professor in the Department of Electronics Engineering at Incheon National University, he has demonstrated a commitment to both education and research since September 2023, following a successful tenure as an Assistant Professor from 2019 to 2023.

šŸŽ“Education:

Dr. Na Taehui earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University, Seoul, Korea, in February 2017. His dissertation, titled “Optimal Reference Scheme and Offset Tolerant Sensing Scheme for Deep Submicrometer STT-RAM,” focused on advancing memory technology. Prior to this, he completed his Bachelor of Science in Electrical and Electronic Engineering at the same institution, graduating in February 2012.

šŸ¢Work Experience:

Dr. Na Taehui is currently serving as an Associate Professor in the Department of Electronics Engineering at Incheon National University, a position he has held since September 2023. Prior to this role, he was an Assistant Professor in the same department from September 2019 to August 2023. Before entering academia, Dr. Na worked as a Staff Engineer in the Flash Design Team of the Memory Division at Samsung Electronics from March 2017 to August 2019.

šŸ…Awards:

Dr. Na Taehui has received several prestigious awards throughout his academic career, including the BK21 Outstanding Student Fellow Award from Yonsei University in 2015. He was also a recipient of the Samsung Scholarship from 2014 to 2017, supporting his doctoral studies. Additionally, Dr. Na was awarded Research Assistantships at Yonsei University in 2012, 2013, and 2014. He consistently excelled in his studies, earning the Highest Honors from Yonsei University in both 2010 and 2011.

šŸ”¬Research Focus:

Dr. Na’s research primarily focuses on memory technology, with a particular emphasis on Spin-Transfer-Torque (STT) MRAM and computing-in-memory systems. He is dedicated to developing optimal reference and offset-tolerant sensing schemes for advanced memory applications, aiming to enhance performance and efficiency. His contributions to the field are well-documented through multiple articles published in high-impact journals, further advancing the understanding of electronics and memory technologies.

Publication Top Notes:

  1. Comparative Study of Various Latch-Type Sense Amplifiers
    • Cited by: 104
  2. STT-MRAM Sensing: A Review
    • Cited by: 79
  3. A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and Compact Area
    • Cited by: 64
  4. Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM
    • Cited by: 54
  5. Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS
    • Cited by: 51

 

 

 

Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

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Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

Prof. Dr. Plamen Petkov , UCTM , Bulgaria

Plamen Petkov, a Bulgarian national born on January 8, 1959, is a distinguished Professor of Physics at the University of Chemical Technology and Metallurgy in Sofia, Bulgaria. With a career spanning from 1985 to the present, he currently serves as the Head of the Thin Films Technology Laboratory and the Physics Department. Petkov holds a Dipl. Eng. (MSc in Semiconductors) from UCTM Sofia and a PhD in Solid State Physics. His extensive experience includes research stints at RWTH Aachen and the University of Odense, specializing in Thin Film Technology. A prolific author, Petkov has published six books and over 165 papers. He is a member of several scientific societies and has coordinated numerous research projects and academic programs. Additionally, he is the Editor in Chief of the journal “Advance in Natural Science: Theory and Applications.” His scientific interests focus on chalcogenide thin films, nanostructured materials, and energy and optical storage.

Professional Profile:

Google Scholar

šŸ“šEducation:

Plamen Petkov holds an MSc in Semiconductors from the University of Chemical Technology and Metallurgy in Sofia, Bulgaria (1976-1981). He further specialized in Thin Film Technology at the Physics Department of RWTH Aachen in Germany (1993-1995) and earned a PhD in Solid State Physics from the same university in 1995. Additionally, he undertook specialization in Thin Film Technology at the University of Odense in Denmark (1998-1999) and Thin Films at the University of Aachen in Germany (2001-2002)

šŸ¢šŸ”¬Work Experience:

Plamen Petkov has been an integral part of the University of Chemical Technology and Metallurgy in Sofia, Bulgaria since 1985. Initially starting as a Researcher and Professor in Physics, his expertise in the field has been instrumental in shaping the academic landscape. Since 2000, he has taken on the role of Head of Laboratory at the Thin Films Technology Lab, where his leadership has propelled research endeavors forward. Additionally, since 2009, he has assumed the responsibility of leading the Physics Department, overseeing its academic and administrative facets. In these roles, Plamen has been pivotal in supervising research initiatives, contributing to the faculty board and academic council, and spearheading numerous national and international research projects. His commitment to academic excellence is further demonstrated through his supervision of Ph.D. and M.S. theses, ensuring the growth and development of future scientists in the field.

Publication Top Notes:

  1. Title: An interpretation of optical properties of oxides and oxide glasses in terms of the electronic ion polarizability and average single bond strength
    • Published Year: 2010
    • Journal: J. Univ. Chem. Technol. Metall
    • Cited By: 523
  2. Title: Measurement of the cross section and angular correlations for associated production of a Z boson with b hadrons in pp collisions at āˆšs = 7 TeV
    • Published Year: 2013
    • Journal: Journal of High Energy Physics
    • Cited By: 214*
  3. Title: Electrode-limited currents in the thin-film Mī—øGeSeī—øM system
    • Published Year: 1989
    • Journal: Materials Chemistry and Physics
    • Cited By: 198
  4. Title: Measurement of the associated production of a single top quark and a Z boson in pp collisions at āˆšs= 13 TeV
    • Published Year: 2018
    • Journal: Physics Letters B
    • Cited By: 132
  5. Title: Suppression of Ī³ and Z production in PbPb collisions at āˆšs= 2.76 TeV
    • Published Year: 2017
    • Journal: Physics Letters B
    • Cited By: 123