Dr. Xiaoci Liang | Microelectronics | Best Researcher Award
Dr. Xiaoci Liang , Sun Yat-sen University, China
Dr. Xiaoci Liang is a postdoctoral researcher at Sun Yat-sen University, specializing in microelectronics and solid-state electronics. His research focuses on oxide thin-film transistors and electrolyte-gated transistors for neuromorphic computing and resistive random-access memory (RRAM). He has published multiple high-impact papers in journals like Nature Electronics and The Journal of Physical Chemistry Letters. Dr. Liang is the principal investigator for two prestigious research projects funded by the Natural Science Foundation of China and the China National Postdoctoral Program for Innovative Talents. His work contributes to advancing high-speed, low-power transistor technologies. β‘π¬
Professional Profile:
Suitability for Best Researcher Award π
Dr. Xiaoci Liang is a strong candidate for the Best Researcher Award, given his pioneering contributions to microelectronics, neuromorphic computing, and next-generation memory technologies. His work on oxide thin-film transistors, electrolyte-gated transistors, and resistive random-access memory (RRAM) has the potential to revolutionize low-power, high-speed electronic components for AI-driven applications.
Education & Experience π
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π 2023 β Present: Postdoctoral Researcher, Sun Yat-sen University
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π 2023: Ph.D. in Microelectronics and Solid-State Electronics, Sun Yat-sen University
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π 2019: M.E. in Microelectronics and Solid-State Electronics, Sun Yat-sen University
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π 2016: B.E. in Microelectronics, Sun Yat-sen University
Professional Development π
Dr. Xiaoci Liang is an emerging expert in thin-film transistors and neuromorphic computing, contributing to cutting-edge advancements in low-power and high-speed electronic devices. π‘ His research focuses on electrolyte-gated transistors, exploring their role in artificial synapses and next-generation memory applications. π§ π‘ He has secured competitive funding to develop innovative transistor technologies, leading two significant national projects. π His work has been published in top-tier journals, earning him recognition in the microelectronics community. π With expertise in material engineering and device physics, he is shaping the future of electronic components for AI-driven applications. π€π¬
Research Focus π
Dr. Liangβs research is centered on neuromorphic computing and next-generation memory devices. π§ πΎ His expertise in oxide thin-film transistors (TFTs) and electrolyte-gated transistors (EGTs) allows him to design high-speed, low-power electronic components for artificial intelligence applications. π His studies in pseudocapacitance, faradaic charge transfer, and defect engineering aim to enhance energy-efficient transistors and synaptic devices. βοΈπ Through groundbreaking research, he is advancing hardware-based neural networks for AI and Internet of Things (IoT) technologies. π His contributions to resistive random-access memory (RRAM) and artificial synaptic devices are shaping the future of intelligent electronics. π‘π‘
Awards & Honors π
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π Principal Investigator β Natural Science Foundation of China Grant (62404255)
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π Principal Investigator β China National Postdoctoral Program for Innovative Talents Grant (BX20230439)
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π Published in High-Impact Journals β Nature Electronics, The Journal of Physical Chemistry Letters, Applied Physics Letters
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π Recognition in Neuromorphic Computing β Contributions to artificial synaptic devices
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π Emerging Research Leader β Advancing oxide transistors and AI-driven microelectronics
Publication Top Notes:
π “Achieving high mobility and enhanced illumination stability in InPrO homojunction thin-film transistors”
π “Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process”