Prof. Dr. Panbong Ha | Electronic | Best Researcher Award

Prof. Dr. Panbong Ha | Electronic | Best Researcher Award

Prof. Dr. Panbong Ha | Electronic | Best Researcher Award

🎓 Panbong Ha is an esteemed Emeritus Professor in the Department of Electronic Engineering at Changwon National University (2023–present). With a career spanning over three decades (1987–2023), he served as a professor in the same department. 🌏 During 1998–1999, he was a Visiting Scholar at Lancaster University’s Communication Research Centre. 🧑‍🔬 He holds a Ph.D. and an MS in Electronic Engineering from Seoul National University. His research expertise spans electronic circuits, memory devices, and hybrid bonding technologies. 🛠️ Recently, his innovative contributions include the design of synaptic driving circuits for memory hardware and error correction-based intellectual property. 📚

Professional Profile:

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Suitability for Best Researcher Award: Panbong Ha

Panbong Ha exemplifies the qualities of an exceptional researcher with a prolific academic and professional career spanning over 35 years. His groundbreaking contributions to electronic engineering, particularly in the fields of memory devices, circuit design, and hybrid bonding technologies, underscore his significance as a thought leader in his field. As a professor at Changwon National University, Panbong Ha not only advanced his research but also nurtured a generation of engineers and researchers. His innovative designs, such as synaptic driving circuits for memory hardware and error correction-based intellectual property, are paving the way for energy-efficient and intelligent electronic systems.

Education and Experience 

  • 🎓 Ph.D. in Electronic Engineering (1985–1995): Seoul National University
  • 🎓 MS in Electronic Engineering (1981–1993): Seoul National University
  • 🧑‍🔬 Researcher (1983–1985): ETRI (Electronics and Telecommunications Research Institute)
  • 👨‍🏫 Professor (1987–2023): Dept. of Electronic Engineering, Changwon National University
  • 🌏 Visiting Scholar (1998–1999): Communication Research Centre, Lancaster University
  • 🎓 Emeritus Professor (2023–present): Dept. of Electronic Engineering, Changwon National University

Professional Development

📈 Panbong Ha has significantly advanced the field of electronic engineering through decades of teaching and research. 🧠 As a professor at Changwon National University (1987–2023), he nurtured innovation and mentored future engineers. 🌏 His tenure as a Visiting Scholar at Lancaster University enriched his knowledge in communication technologies. 🔧 His professional growth reflects his commitment to cutting-edge research, contributing groundbreaking advancements in error correction codes and synaptic driving circuits. 🎯 Through his leadership and expertise, Panbong Ha has remained a driving force in the development of electronic systems, fostering global collaboration and pushing the boundaries of technology. 🌐

Research Focus

🛠️ Panbong Ha’s research focuses on advanced electronic engineering, emphasizing memory devices and circuit design. 🎯 His recent work includes developing multi-time programmable intellectual property with built-in error correction code functions and designing synaptic driving circuits for TFT eFlash-based processing-in-memory hardware. 🧠 These innovations utilize hybrid bonding and advanced semiconductor processes like Bipolar–CMOS–DMOS. 🔍 His research contributes to the evolution of error-resistant electronics and energy-efficient memory systems. 💡 By addressing the challenges of modern electronic design, his work accelerates the development of smarter, more efficient technologies, influencing fields such as AI hardware and integrated memory processing systems. 🚀

Awards and Honors

  • 🏆 Emeritus Professorship (2023): Changwon National University
  • 🌍 Visiting Scholar Recognition (1998–1999): Lancaster University
  • 🎖️ Decades of Excellence Award: Changwon National University (1987–2023)
  • 🛠️ Innovation in Research Award: For advancements in memory circuits and error correction technologies
  • 📜 Recognition for Academic Excellence: Seoul National University during MS and Ph.D. studies

Publication Top Notes:

Design of Multi-Time Programmable Intellectual Property with Built-In Error Correction Code Function Based on Bipolar–CMOS–DMOS Process

Design of Synaptic Driving Circuit for TFT eFlash-Based Processing-In-Memory Hardware Using Hybrid Bonding

Mr. Halil SEYMEN | Nanoelectronics Awards | Best Researcher Award

Mr. Halil SEYMEN | Nanoelectronics Awards | Best Researcher Award

Mr. Halil SEYMEN , Muş Alparslan Universty , Turkey

Halil Seymen is a dedicated academic and researcher with extensive experience in the field of material science and engineering. Holding a Ph.D. from Kahramanmaraş Sütçü İmam University and having pursued doctoral studies at Bingöl University, his research focuses on optoelectronic materials and semiconductor physics. With a background in physics from Yüzüncü Yıl University and Atatürk University, Halil has contributed significantly to the field through his work as a lecturer at Muş Alparslan University. His research, which includes investigations into the electrical and photonic properties of semiconductor structures, has been published in reputable journals. Halil’s expertise extends to teaching, where he shares his knowledge and passion for physics with students, and he actively engages in academic activities to further scientific understanding and technological advancement.

Professional Profile:

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📚 Education:

Halil Seymen’s academic journey reflects a commitment to advancing knowledge in the fields of physics and material science. He holds a Ph.D. in Material Science and Engineering from Kahramanmaraş Sütçü İmam University, Turkey, where he delved into the intricate realms of materials and their engineering applications. Prior to this, he pursued a Ph.D. in Physics at Bingöl University, Turkey, further enriching his understanding of fundamental physical principles. Halil’s educational foundation includes a Master of Science (M.Sc) degree in Physics from Yüzüncü Yıl University and a Bachelor of Science (B.Sc) in Physics from Atatürk University, both in Turkey. This diverse educational background has equipped him with a comprehensive grasp of both theoretical concepts and practical applications in the fields of physics and material science. Through his academic pursuits, Halil Seymen continues to contribute to the advancement of scientific knowledge and technological innovation.

👨‍🏫 Work Experience:

Halil Seymen has played pivotal roles in both academia and education in Turkey. Currently serving as an Assistant Professor at Muş Alparslan University, he contributes to the academic landscape by imparting knowledge and mentoring students in his areas of expertise. Prior to this, Halil worked as a Teacher for the Ministry of National Education in Turkey, where he played a vital role in shaping the educational experiences of students. His dedication to both teaching and research underscores his commitment to fostering intellectual growth and contributing to the development of future generations.

🔬 Research Focus:

Halil Seymen’s research interests encompass a wide array of cutting-edge topics within the realm of materials science and engineering. His expertise spans across diverse fields, including optoelectronic materials, polymer materials, graphene oxide, and nanomaterials. With a focus on experimental solid-state physics, Halil explores the fundamental properties and behaviors of materials at the atomic and molecular levels. His research endeavors aim to advance our understanding of material properties and pave the way for the development of innovative technologies with applications in various industries. Through his multidisciplinary approach, Halil Seymen contributes significantly to the advancement of material science and engineering.

Publication Top Notes:

  1. Investigation of electrical, photodiode and photovoltaic properties of Au/SiO2/n-Si structures with GO and P3C4MT interface
    Seymen, H., Karataş, S.
    Materials Chemistry and Physics, 2023, 310, 128449.
    Citations: 1
  2. Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer
    Seymen, H., Berk, N., Orak, İ., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2022, 33(24), pp. 19656–19666.
    Citations: 9
  3. The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures
    Berk, N., Seymen, H., Orak, İ., Karataş, Ş.
    Journal of Physics and Chemistry of Solids, 2022, 160, 110348.
    Citations: 14
  4. The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface
    Berk, N., Seymen, H., Orak, I., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2021, 32(13), pp. 17500–17511.
    Citations: 11
  5. Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures
    Kılçık, A., Berk, N., Seymen, H., Karataş, Ş.
    Journal of Materials Science: Materials in Electronics, 2021, 32(6), pp. 7913–7925.
    Citations: 17