Bo Yao | Neuromorphic Devices | Best Researcher Award

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Prof. Bo Yao | Neuromorphic Devices | Best Researcher Award

Deputy Director at Shaoxing University | China

Prof. Bo Yao is an Associate Professor at Shaoxing University, China, specializing in semiconductor devices and optoelectronic materials. He earned his Ph.D. from Lanzhou University, focusing on semiconductor physics and advanced electronic devices. His research explores III-V-based MOSFETs, flexible photodetectors, phototransistors, and organic photoelectric functional films. Prof. Yao has published over 21 papers in prestigious SCI and EI indexed journals, including Applied Physics Letters, Journal of Materials Chemistry C, and IEEE Transactions on Electron Devices. He holds 15 national invention patents, with 8 already authorized. Recognized for his contributions, he has been selected as a “Young Outstanding Talent” under the Zhejiang Province University Leading Talent Cultivation Program and a “Young Top-notch Talent” under Shaoxing City’s “Hometown of Scholars” Special Support Program.

Professional Profile

Scopus Profile

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Education

Prof. Bo Yao received his Ph.D. degree from Lanzhou University, China, specializing in semiconductor physics and electronic devices. His doctoral research laid a strong foundation in the design, preparation, and performance analysis of advanced optoelectronic and semiconductor materials, which continues to guide his academic and professional career in the field of flexible photodetectors, MOSFETs, and organic optoelectronic functional films.

Experience

Prof. Bo Yao has extensive academic and research experience in the field of optoelectronics and semiconductor devices. After completing his Ph.D. at Lanzhou University, he joined Shaoxing University, where he has been actively engaged in teaching and research. He has been serving as an Associate Professor, focusing on the study of organic photoelectric functional films, semiconductor photodetectors, and III–V-based MOSFETs. His expertise also includes the design and fabrication of flexible photodetectors and phototransistors, contributing to the advancement of next-generation optoelectronic technologies. Alongside his teaching responsibilities, he has guided students in research projects, published widely in leading journals, and secured multiple patents, demonstrating his strong academic leadership and innovative research contributions.

Research Interests

Prof. Bo Yao’s research interests lie at the intersection of advanced semiconductor devices and optoelectronic materials. His work primarily focuses on III-V-based MOSFETs, where he explores innovative design and fabrication methods to enhance device performance for next-generation electronics. He is also engaged in the development of flexible photodetectors and phototransistors, emphasizing high sensitivity, stability, and adaptability for wearable and bendable technologies. In addition, Prof. Yao has made significant contributions to the preparation and performance optimization of organic photoelectric functional films and semiconductor photodetectors, advancing their applications in optical signal detection and optoelectronic integration. Through his research, he aims to bridge materials science with practical device engineering, contributing to the evolution of efficient, reliable, and multifunctional electronic and optoelectronic systems.

Publications

Dual-functional organic/perovskite heterojunction phototransistors enabling wide-spectrum detection and synaptic plasticity emulation

Ultra-low dark current and high sensitivity lead-free perovskite–like photodetector realized by anti-solvent optimization Cs3Bi2I9 amorphous film

High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs3Bi2I9 Heterojunction

High-Performance Flexible Near-Infrared-II Phototransistor Realized by Combining the Optimized Charge-Transfer-Complex/Organic Heterojunction Active Layer and Gold Nanoparticle Modification

Conclusion

Prof. Bo Yao is a highly suitable candidate for the Research for Best Researcher Award. His strong record of publications, patents, and funded recognition programs highlights both academic excellence and innovation. With his continued growth in international outreach and collaborative impact, he is well-positioned to emerge as a leading figure in semiconductor device research and optoelectronic technologies.

Sirsendu Ghosh | Neuromorphic | Best Scholar Award

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Mr. Sirsendu Ghosh | Neuromorphic | Best Scholar Award

Sirsendu Ghosh at Indian Institute of Technology Bombay, India

Mr. Sirsendu Ghosh is a research scholar in the Department of Physics at the Indian Institute of Technology Bombay, specializing in experimental condensed matter physics. He holds a B.Sc. and M.Sc. in Physics from the University of Calcutta and has qualified the prestigious CSIR-NET. His research focuses on vertical organic field-effect transistors (VOFETs) and synaptic devices based on organic semiconductors, with the goal of advancing miniaturized electronics and neuromorphic systems. His work has been published in reputed journals such as Transactions on Electron Devices, Advanced Theory and Simulations, and Materials Today Communications.

Professional Profile:

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Summary of Suitability for Best Scholar Award: Sirsendu Ghosh

Mr. Sirsendu Ghosh, a dedicated research scholar at the Indian Institute of Technology Bombay, exhibits strong potential and academic merit deserving of the Best Scholar Award. With a solid foundation in Physics from the University of Calcutta (B.Sc. and M.Sc.) and qualification of the prestigious CSIR-NET, he has demonstrated a strong academic trajectory and commitment to advanced research.

🎓 Education

  • Ph.D. in Physics (Ongoing)
    🏛️ Indian Institute of Technology Bombay
    📅 2020 – Present

  • M.Sc. in Physics
    🏛️ University of Calcutta
    📅 2018 – 2020

  • B.Sc. in Physics
    🏛️ University of Calcutta
    📅 2015 – 2018

  • 🧪 Qualified CSIR-NET (Council of Scientific and Industrial Research – Govt. of India)

🧪 Areas of Research

  • 🔬 Experimental Condensed Matter Physics

  • ⚡ Vertical Organic Field-Effect Transistors (VOFETs)

  • 🧠 Synaptic Devices Based on Organic Semiconductors

  • 📐 Neuromorphic Electronics

📚 Research Contributions

  • ✅ VOFET Simulation: Demonstrated that insulating the source contact in PTCDI-C8 based devices drastically reduces off-current, improving the on/off ratio.

  • 💡 MoS₂ VOFETs: Achieved ultra-miniaturization with buried layers <2 nm, offering superior scaling compared to organic transistors.

  • 🔆 Opto-Electronic Synaptic Devices: PBTTT-C14-based devices respond to visible & IR light, paving the way for multi-stimuli neuromorphic systems.

🌐 Conferences Attended

  • 📌 DAE Solid State Physics Symposium (DAE-SSPS), 2023

  • 🌍 IUMRS-ICA, 2024 (International Union of Materials Research Societies – International Conference in Asia)

🏆 Achievements & Recognitions

  • 🧠 Qualified CSIR-NET – National Eligibility Test for lectureship and JRF

  • 🧪 International Research Recognition – For outstanding contributions in Advanced Nanomaterials & Nanotechnology

  • 🎓 Consistently active participant in national and international scientific forums

👥 Collaborations & Memberships

  • 🤝 Active collaboration on international transistor simulation research

  • 📚 Participates in interdisciplinary research involving physics, materials science, and device engineering

Publication Top Notes

Simulation Study on Comparison of “Inside-Channel” and “On-Dielectric” Source Contact Modifications on the Performance of the Vertical Organic Field Effect Transistors

Cited : 2

Simulation on the Miniaturization and Performance Improvement Study of Gr/MoS2 Based Vertical Field Effect Transistor