Prof. Taehui Na | NanoElectronics Awards | Best Researcher Award
Prof. Taehui Na, Incheon National University, South Korea
Dr. Na Taehui is an Associate Professor in the Department of Electronics Engineering at Incheon National University, where he has been since September 2023, after serving as an Assistant Professor from 2019 to 2023. He earned his Ph.D. in Electrical and Electronic Engineering from Yonsei University in February 2017, focusing on optimal reference and offset-tolerant sensing schemes for deep submicrometer STT-RAM. Dr. Na has a robust professional background, having previously worked as a Staff Engineer at Samsung Electronics. His research interests encompass various aspects of memory technology, including spin-transfer-torque MRAM and computing-in-memory systems, with multiple publications in esteemed journals. Throughout his academic journey, he has received several accolades, including the BK21 Outstanding Student Fellow Award and the Samsung Scholarship
Professional Profile:
Summary of Suitability:
Dr. Na Taehui is a commendable candidate for the Best Researcher Award due to his significant contributions to the field of electronics engineering, particularly in memory technology. As an Associate Professor in the Department of Electronics Engineering at Incheon National University, he has demonstrated a commitment to both education and research since September 2023, following a successful tenure as an Assistant Professor from 2019 to 2023.
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Publication Top Notes:
- Comparative Study of Various Latch-Type Sense Amplifiers
- Cited by: 104
- STT-MRAM Sensing: A Review
- Cited by: 79
- A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and Compact Area
- Cited by: 64
- Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM
- Cited by: 54
- Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS
- Cited by: 51