Dr. Gyungtae Kim | Nanoscale Awards | Excellence in Research
Dr. Gyungtae Kim ,National nanofab center , South Korea
Gyungtae Kim is a principal researcher at the National Nanofab Center in the Department of Measurement & Analysis, specializing in nanoscale characterization and surface analysis. Born on July 17, 1977, in South Korea, he earned his Ph.D. in Electronics, Radio Sciences & Engineering and Information Communications from Chungnam National University in February 2016. He has extensive experience in the semiconductor industry, having worked as a senior engineer at SK Hynix from 2004 to 2011 before joining the National Nanofab Center. Over his 13-year research career, he has contributed significantly to the field of semiconductor metrology, with key expertise in surface and X-ray analysis. His research has resulted in numerous publications in high-impact journals and involvement in several high-profile projects. Gyungtae is also an active member of several academic committees and has presented his work at major international conferences.
Professional Profile:
Suitability for Excellence in Research Award: Gyungtae Kim
Gyungtae Kim is a highly qualified researcher with extensive experience in the field of nanoscale characterization. His educational background, professional experience, and significant contributions to research and development make him a strong candidate for the Excellence in Research Award.
🎓Education:
Gyungtae Kim holds a Ph.D. in Electronics, Radio Sciences & Engineering and Information Communications from Chungnam National University, completed in February 2016. His doctoral thesis, titled “Reliable Electro-Thermal Modeling and Characterization for Highly Uniform Amorphous-Silicon Microbolometer,” was supervised by Prof. Hyoungho Ko. Prior to his Ph.D., he earned a Master’s degree in the same field from Chungnam National University in February 2014. He also holds a Bachelor’s degree in Electronics Engineering from Inha University, which he completed in February 2004.
🏢Work Experience:
Gyungtae Kim is a Principal Researcher in the Department of Measurement & Analysis at the National Nanofab Center, a position he has held since 2016. His key experiences in this role include surface analysis, X-ray analysis, and semiconductor metrology. Prior to this, he served as a Senior Researcher in the Semiconductor Device Department at the same institution from 2011 to 2016. Before joining the National Nanofab Center, Gyungtae worked as a Senior Engineer at SK Hynix from 2004 to 2011, where he gained substantial industry experience.
🏅Conferences and Presentations:
Gyungtae has presented his work at major international conferences such as the European Conference on X-ray Spectrometry (EXRS) and the Korean Physical Society (KPS) Fall Meeting, among others. His contributions to these conferences have focused on advancements in semiconductor metrology and surface analysis techniques
Publication Top Notes:
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Nano-mapping of vertical contact electrodes using synchrotron scanning photoelectron microscopy
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Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis
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Stabilizing a lithium metal anode through the sustainable release of a multi-functional AgNO3 additive
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Controlled adsorption of gas molecules by tuning porosity of titanium film
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Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM
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