Prof. Adel Ashery is a distinguished Egyptian physicist and Full Professor at the National Research Centre (NRC), Cairo, Egypt, where he currently serves as Head of the Department of Solid State Physics. With a career spanning over three decades, Prof. Ashery has established himself as a leading authority in the field of solid-state physics, semiconductor materials, and thin-film device engineering. He obtained his Ph.D. in Physics from the Leningrad Institute of Electronic Engineering, Russia, following a Science Diploma from Russia and a Bachelor of Science degree from Cairo University. His pioneering research focuses on the preparation and characterization of single-crystal devices and thin films through advanced fabrication techniques, including liquid phase epitaxy (LPE), chemical vapor deposition (CVD), photolithography, electrochemical ionization, and sol-gel processes. Throughout his career, Prof. Ashery has successfully designed and implemented experimental systems for device fabrication, encompassing key technologies such as diffusion furnaces, I–V characterization systems, and spin coating. His prolific scientific output includes over 90 peer-reviewed publications in prestigious international journals such as Physica B, ECS Journal of Solid State Science and Technology, Nanotechnology Reviews, Silicon, and Optical and Quantum Electronics, among others. His research addresses critical challenges in dielectric materials, heterojunction diodes, nanocomposites, and optoelectronic devices, contributing significantly to the development of resistive memory systems, high-κ dielectrics, photodiodes, and next-generation electronic materials. Recent works highlight his innovative contributions to tunable dielectric behavior, negative capacitance phenomena, and hybrid nanostructures employing carbon nanotubes, graphene oxide, and polymer matrices. Prof. Ashery’s studies on Ag/SiO₂/Si, GaAs/p-Si, and polypyrrole-based heterostructures have offered new insights into charge transport, dielectric loss reduction, and interfacial engineering for high-performance electronic and photonic applications. He has collaborated extensively with national and international scientists, achieving over 600 citations and an h-index of 17, reflecting his strong impact in condensed matter and applied physics. As a mentor, innovator, and research leader, Prof. Adel Ashery continues to advance the frontiers of nanoelectronic materials, solid-state device physics, and semiconductor engineering, fostering scientific excellence and technological progress within Egypt’s research landscape and the global scientific community.
Profile: Scopus | Orcid
Featured Publications
Ashery, A. (2025). Interfacial engineering and dielectric tunability in Ag/Al/SiO₂/n-Si/Ag heterostructures: Novel insights for resistive memory and high-κ electronics. Physica B: Condensed Matter.
Ashery, A. (2025). Ag/MWCNTs-PVA composite/n-Si/Ag exhibits a novel combination of high electrical conductance and tunable capacitance in magnitude and sign. ECS Journal of Solid State Science and Technology.
Ashery, A., & Gad, S. A. (2024). Impedance spectroscopy and electrical properties of novel structure of Au/AlCu/SiO₂/p-Si/Al. ECS Journal of Solid State Science and Technology.
Ashery, A., & Gaballah, A. E. H. (2023). Effect of n and p-silicon substrate on dielectric constant, dielectric loss tangent of PPy-MWCNTs/TiO₂/Al₂O₃ structure. Silicon.
Ashery, A. (2022). Tuned high dielectric constant, low dielectric loss tangent of novel structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al. ECS Journal of Solid State Science and Technology.